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hexfet ? power mosfet description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resis- tance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. AUIRF7342Q www.irf.com 1 advanced planar technology low on-resistance dual p-channel mosfet dynamic dv/dt rating 150c operating temperature fast switching fully avalanche rated lead-free, rohs compliant automotive qualified* automotive grade absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not impl ied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipat ion ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. so-8 AUIRF7342Q d1 d1 d 2 d 2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss -55v r ds(on) max. 0.105 i d -3.4a parameter max. units v ds drain-source voltage -55 v i d @ t a = 25c continuous drain current, v gs @ -10v -3.4 i d @ t a = 70c continuous drain current, v gs @ -10v -2.7 i dm pulsed drain current -27 p d @t a = 25c power dissipation 2.0 p d @t a = 70c power dissipation 1.3 linear derating factor 0.016 mw/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10 s30v e as single pulse avalanche energy 114 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter max. units r ja junction-to-ambient 62.5 c/w w a c -55 to + 150 pd - 97640
AUIRF7342Q 2 www.irf.com s d g notes: repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) starting t j = 25c, l = 20mh, r g = 25 , i as = -3.4a. (see figure 8) i sd -3.4a, di/dt -150a/ s, v dd v (br)dss , t j 150c. pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -55 ??? ??? v () () dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 26 38 q gs gate-to-source charge ??? 3.0 4.5 q gd gate-to-drain ("miller") charge ??? 8.4 13 t d(on) turn-on delay time ??? 14 22 t r rise time ??? 10 15 t d(off) turn-off delay time ??? 43 64 t f fall time ??? 22 32 c iss input capacitance ??? 690 ??? c oss output capacitance ??? 210 ??? c rss reverse transfer capacitance ??? 86 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 54 80 ns t j = 25c,i f = -2.0a q rr reverse recovery charge ??? 85 130 nc di/dt = 100a/ s -27 ??? ??? ??? ??? -2.0 i d = -1.0a r g = 6.0 v gs = 0v v ds = -25v ? = 1.0mhz, see fig. 9 na a a pf ns nc t j = 25c, i s = -2.0a, v gs = 0v integral reverse p-n junction diode. conditions mosfet symbol showing the v ds = -55v, v gs = 0v v ds = -55v, v gs = 0v, t j = 55c v gs = -10v, see fig. 10 conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -3.4a v gs = 20v v ds = -44v v dd = -28v r ds(on) static drain-to-source on-resistance v gs = -4.5v, i d = -2.7a conditions v ds = -10v, i d = -3.1a i d = -3.1a v gs = -20v v ds = v gs , i d = -250 a AUIRF7342Q www.irf.com 3 !"#"$ $ % & &'& qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m2 (+/- 200v) ??? aec-q101-002 human body model class h1a (+/- 500v) ??? aec-q101-001 AUIRF7342Q 4 www.irf.com () ( () * () * 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -12v -10v -8.0v -4.5v -4.0v -3.5v bottom -3.0v 60 s pulse width tj = 25c -3.0v 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -3.0v 60 s pulse width tj = 150c vgs top -15v -12v -10v -8.0v -4.5v -4.0v -3.5v bottom -3.0v () * 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -12v -10v -8.0v -4.5v -4.0v -3.5v bottom -3.0v 60 s pulse width tj = -40c -3.0v 1 2 3 4 5 6 7 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c t j = 25c t j = 150c v ds = -25v 60 s pulse width AUIRF7342Q www.irf.com 5 +,* ! '( -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a () * ! -. 0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v /' &) '. () * ! '0 -& 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a ( ) 0.05 0.15 0.25 0.35 0.45 2581114 a gs -v , gate-to-source voltage (v) i = -3.4 a d AUIRF7342Q 6 www.irf.com 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds () 0 &' 0!!1 -& () ' . !!1 -& 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -v sd , source-to-drain voltage (v) 1.0 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = -40c t j = 25c t j = 150c () 1 !. . 2-& fig 12. maximum safe operating area 1 10 100 -v ds , drain-tosource voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec AUIRF7342Q www.irf.com 7 / '( ( 34 !! 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 13. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - i d , d r a i n c u r r e n t ( a ) AUIRF7342Q 8 www.irf.com so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking ! 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